The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Dec. 19, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Han-Chin Chiu, Kaohsiung, TW;
Cheng-Yuan Tsai, Hsin-Chu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/29 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66431 (2013.01); H01L 23/291 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/513 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/41766 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor device includes a compound semiconductor layer, an oxide layer over and contacting the compound semiconductor layer, a nitride layer over and contacting the oxide layer, and a dielectric layer over and contacting the nitride layer. At least a portion of the oxide layer comprises a first crystalline structure. At least a portion of the nitride layer comprises a second crystalline structure.