The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Dec. 05, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Wei Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes first and second gate stack, a source/drain contact, and a first gate capping structure. The first gate stack and the second gate stack are over a semiconductor fin. The source/drain contact extends laterally from a first gate spacer of the first gate stack to a second gate spacer of the second gate stack, and extends vertically from a source/drain region in the semiconductor fin to above the source/drain region. The first gate capping structure is atop the first gate stack, and has a greater thickness on the first gate spacer of the first gate stack than on a gate metal of the first gate stack. The thickness is measured in a direction perpendicular to a top surface of the first gate stack.