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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11004941 B1

PDFFull Text
Date of Patent:
May. 11, 2021

Filed:

Aug. 06, 2020

Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Keiji Wada, Itami, JP;

Hironori Itoh, Itami, JP;

Taro Nishiguchi, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Attorneys:

Baker Botts L.L.P.

Michael A. Sartori

Primary Examiner:

Khiem D Nguyen

Int. Cl.
CPC ...
H01L 29/16 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 29/12 (2006.01); H01L 29/161 (2006.01); H01L 29/78 (2006.01); H01L 29/34 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/20 (2013.01); H01L 21/205 (2013.01); H01L 29/12 (2013.01); H01L 29/161 (2013.01); H01L 29/34 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01);
Abstract

A silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. An average value of carrier concentration in the silicon carbide layer is not less than 1×10cmand not more than 5×10cm. In-plane uniformity of the carrier concentration is not more than 2%. The second main surface has: a grooveextending in one direction along the second main surface, a width of the groove in the one direction being twice or more as large as a width thereof in a direction perpendicular to the one direction, and a maximum depth of the groove from the second main surface being not more than 10 nm; and a carrot defect. A value obtained by dividing a number of the carrot defects by a number of the grooves is not more than 1/500.

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