The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jan. 02, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Jian Shi, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate, a gate structure, a source/drain region, a contact opening, an etching stop layer, an interlayer dielectric layer, and a first contact structure. The substrate includes a buried insulation layer, a semiconductor layer, and an isolation structure. The semiconductor layer is disposed on the buried insulation layer. The gate structure is disposed on the semiconductor layer. The isolation structure and the source/drain region are disposed in the semiconductor layer. The contact opening penetrates at least a part of the substrate. The etching stop layer is disposed on the gate structure, the source/drain region, a sidewall of the contact opening, and a bottom of the contact opening. The interlayer dielectric layer is disposed on the etching stop layer. The first contact structure penetrates the interlayer dielectric layer and the etching stop layer in the contact opening.