The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jan. 21, 2020
Yield Microelectronics Corp., Chu-Pei, TW;
Yield Microelectronics Corp., Chu-Pei, TW;
Abstract
An operating method of an EEPROM cell is provided. The EEPROM cell comprises a transistor structure disposed on a semiconductor substrate and the transistor structure comprises a first electric-conduction gate. The-same-type ions are implanted into the semiconductor substrate between an interface of its source, drain and the first electric-conduction gate, or into the ion doped regions of the source and the drain, so as to increase ion concentrations in the implanted regions and reduce voltage difference in writing and erasing operations. The operating method of the EEPROM cell provides an operating condition that the drain or the source is set as floating during operations, to achieve the objective of rapid writing and erasing of a large number of memory cells. The proposed operating method is also applicable to the EEPROM cell having a floating gate structure in addition to a single gate transistor structure.