The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Nov. 28, 2018
Applicant:
Lapis Semiconductor Co., Ltd., Yokohama, JP;
Inventor:
Masanori Shindo, Yokohama, JP;
Assignee:
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 21/78 (2006.01); H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 21/78 (2013.01); H01L 23/5225 (2013.01); H01L 23/552 (2013.01); H01L 24/03 (2013.01); H01L 24/04 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/94 (2013.01); H01L 21/6836 (2013.01); H01L 23/3114 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/3025 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.