The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Aug. 21, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Richard Knipper, Regensburg, DE;

Thorsten Scharf, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/565 (2013.01); H01L 21/0274 (2013.01); H01L 21/4846 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 23/3107 (2013.01); H01L 24/05 (2013.01); H01L 2224/02205 (2013.01);
Abstract

A method includes: providing a semiconductor die having a first main surface, a second main surface opposite the first main surface, and an edge between the first main surface and the second main surface; applying a temporary spacer to a first part of the first main surface of the semiconductor die, the first part being positioned inward from a peripheral part of the first main surface; after applying the temporary spacer, embedding the semiconductor die at least partly in an embedding material, the embedding material covering the edge and the peripheral part of the first main surface of the semiconductor die and contacting a sidewall of the temporary spacer; and after the embedding, removing the temporary spacer from the first main surface of the semiconductor die to expose the first part of the first main surface of the semiconductor die. A semiconductor device produced by the method is also provided.


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