The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Aug. 31, 2020
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Riki Suzuki, Yokohama, JP;

Masanobu Shirakawa, Chigasaki, JP;

Yoshihisa Kojima, Kawasaki, JP;

Marie Takada, Yokohama, JP;

Tsukasa Tokutomi, Kamakura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G11C 7/08 (2013.01); G11C 7/106 (2013.01); G11C 7/109 (2013.01); G11C 7/1063 (2013.01); G11C 7/1087 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01); G11C 16/3459 (2013.01);
Abstract

According to one embodiment, a nonvolatile memory includes: a memory cell array including memory cells; and a controller configured to execute a first refresh process on receiving a first command. The first refresh process includes reprogramming at least one second memory cell among first memory cells to which data has been programmed in a first group. In executing the first refresh process, the controller is configured to: select the second memory cell by verifying with a first voltage using a first amount in a case where the second memory cell has been programmed using the first voltage; and select the second memory cell by verifying with a second voltage using a second amount in a case where the second memory cell has been programmed using the second voltage.


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