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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11003076 B1

PDFFull Text
Date of Patent:
May. 11, 2021

Filed:

Aug. 30, 2019

Extreme ultraviolet photoresist and method

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yen-Hao Chen, New Taipei, TW;

Wei-Han Lai, New Taipei, TW;

Chien-Wei Wang, Hsinchu County, TW;

Chin-Hsiang Lin, Hsin-chu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/32 (2006.01); C07C 381/12 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); C07D 335/12 (2006.01); C07D 337/10 (2006.01); C07D 337/16 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); C07C 381/12 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/16 (2013.01); G03F 7/2002 (2013.01); G03F 7/2004 (2013.01); G03F 7/26 (2013.01); G03F 7/32 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); C07D 335/12 (2013.01); C07D 337/10 (2013.01); C07D 337/16 (2013.01);
Abstract

Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.

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