The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Aug. 31, 2016
Applicant:

Taiwan Semiconductor Manufacturing Comany Limited, Hsinchu, TW;

Inventors:

Tung-Tsun Chen, Hsinchu, TW;

Chien-Kuo Yang, Taipei, TW;

Jui-Cheng Huang, Hsinchu, TW;

Mark Chen, Hsinchu, TW;

Ta-Chuan Liao, Taichung, TW;

Cheng-Hsiang Hsieh, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); G01N 33/543 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); G01N 33/54373 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 29/0649 (2013.01); H01L 29/0684 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42356 (2013.01); H01L 29/4916 (2013.01); G01N 27/4148 (2013.01);
Abstract

Biosensor devices and methods of forming the same are provided. A cavity is formed in a substrate and is configured to receive one or more charged molecules. A transistor is formed in the substrate and includes a source region, a drain region, and a channel region that are spatially separated from the cavity in a lateral direction. A gate of the transistor is disposed below the cavity and extends between the cavity and the source, drain, and channel regions. A voltage potential of the gate is based on a number of the charged molecules in the cavity.


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