The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2021
Filed:
Jun. 07, 2016
Hitachi Kokusai Electric Inc., Tokyo, JP;
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.