The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Mar. 01, 2018
Applicant:
Stmicroelectronics International N.v., Schiphol, NL;
Inventor:
Radhakrishnan Sithanandam, Greater Noida, IN;
Assignee:
STMicroelectronics International N.V., Schiphol, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/87 (2006.01); H01L 29/73 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 23/528 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 27/0266 (2013.01); H01L 27/0635 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/7391 (2013.01); H01L 29/7835 (2013.01); H01L 29/87 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 29/0653 (2013.01); H01L 29/73 (2013.01);
Abstract
Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.