The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Aug. 05, 2019
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;

Inventors:

Tatsuya Ohguro, Nonoichi, JP;

Tatsuya Nishiwaki, Nonoichi, JP;

Hideharu Kojima, Kanazawa, JP;

Yoshiharu Takada, Nonoichi, JP;

Kikuo Aida, Oita, JP;

Kentaro Ichinoseki, Nonoichi, JP;

Kohei Oasa, Nonoichi, JP;

Shingo Sato, Kanazawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 23/53238 (2013.01); H01L 23/53271 (2013.01); H01L 24/13 (2013.01); H01L 29/41741 (2013.01); H01L 29/7813 (2013.01); H01L 2224/13147 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g·μm·cm])/(density of the first metal material [g·cm]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g·μm·cm])/(density of the second metal material [g·cm]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode provided on the second solder portion.


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