The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Dec. 30, 2019
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hui Zang, Guiderland, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01);
Abstract
At least one method, apparatus and system disclosed herein involves adjusting for a misalignment of a gate cut region with respect to semiconductor processing. A plurality of fins are formed on a semiconductor substrate. A gate region is formed over a portion of the fins. The gate region comprises a first dummy gate and a second dummy gate. A gate cut region is formed over the first dummy gate. A conformal fill material is deposited into the gate cut region. At least one subsequent processing step is performed.