The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Apr. 28, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Yueh-Chuan Lee, Hsinchu, TW;
Chia-Chan Chen, Zhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 21/0257 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14689 (2013.01); H01L 29/0638 (2013.01);
Abstract
The present disclosure relates to a method of forming an integrated chip. The method may be performed by selectively etching a substrate to define a trench. One or more dielectric materials are formed within the trench. A part of the one or more dielectric materials are removed from within the trench to expose a sidewall of the substrate defining the trench. A doped epitaxial material is formed along the sidewall of the substrate.