The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Mar. 11, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yueh-Chuan Lee, Hsinchu, TW;

Chia-Chan Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 21/0257 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14689 (2013.01); H01L 29/0638 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has a photodetector region arranged within a semiconductor substrate. One or more dielectric materials are disposed within a trench defined by one or more interior surfaces of the semiconductor substrate. A doped epitaxial material is arranged within the trench and is laterally between the one or more dielectric materials and the photodetector region. A dielectric protection layer is arranged over the one or more dielectric materials within the trench. The dielectric protection layer laterally contacts a sidewall of the doped epitaxial material.


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