The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Oct. 06, 2016
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Yan-Liang Ji, Hsinchu, TW;

Ming-Jen Hsiung, Zhubei, TW;

Assignee:

MediaTek Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/3192 (2013.01); H01L 23/481 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/11 (2013.01); H01L 24/17 (2013.01); H01L 23/3171 (2013.01); H01L 24/13 (2013.01); H01L 24/94 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/02351 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05078 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05088 (2013.01); H01L 2224/05095 (2013.01); H01L 2224/05096 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/131 (2013.01); H01L 2224/94 (2013.01);
Abstract

A wafer-level chip-size package includes a semiconductor structure. A bonding pad is formed over the semiconductor structure, including a plurality of conductive segments. A conductive component is formed over the semiconductor structure, being adjacent to the bonding pad. A passivation layer is formed, exposing a portions of the conductive segments of the first bonding pad. A conductive redistribution layer is formed over the portions of the conductive segments of the first bonding pad exposed by the passivation layer. A planarization layer is formed over the passivation layer and the conductive redistribution layer, exposing a portion of the conductive redistribution layer. A UBM layer is formed over the planarization layer and the portion of the conductive redistribution layer exposed by the planarization layer. A conductive bump is formed over the UBM layer.


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