The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Jan. 16, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Tzu-Hui Wei, Hsinchu County, TW;
Chien-Hua Huang, Miaoli County, TW;
Cherng-Shiaw Tsai, New Taipei, TW;
Chung-Ju Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method for forming a semiconductor device. The method includes providing a substrate having a metal pattern, and forming an etch stop layer over the substrate. The etch stop layer includes a first material. The method also includes forming a diffused area in the etch stop layer by diffusing a second material from the metal pattern to the etch stop layer, and forming an insulative layer over the etch stop layer. The diffused area includes a lower etch rate to a first etchant than the insulative layer. A semiconductor device is also provided.