The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Nov. 13, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Susmit Singha Roy, Mountain View, CA (US);
Yingli Rao, Palo Alto, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 27/11578 (2017.01); H01L 21/321 (2006.01); C23C 16/34 (2006.01); C23C 16/06 (2006.01); C23C 28/00 (2006.01); H01L 21/3205 (2006.01); C23C 16/50 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 27/115 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45523 (2013.01); C23C 16/50 (2013.01); C23C 28/32 (2013.01); C23C 28/34 (2013.01); C23C 28/3455 (2013.01); C23C 28/40 (2013.01); C23C 28/44 (2013.01); H01L 21/321 (2013.01); H01L 21/32051 (2013.01); H01L 27/11578 (2013.01); H01L 27/115 (2013.01);
Abstract
Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.