The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Jan. 22, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Timothy Mathew Philip, Albany, NY (US);

Somnath Ghosh, Clifton Park, NY (US);

Daniel James Dechene, Watervliet, NY (US);

Robert Robison, Rexford, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0226 (2013.01); H01L 21/0273 (2013.01); H01L 21/02175 (2013.01); H01L 21/0332 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract

Integrated chips and methods of forming the same include forming a first set of sidewall spacers on a first mandrel at first vertical level. The first mandrel is etched away. A second set of sidewall spacers is formed on a second mandrel at a second vertical level. A portion of the second set of sidewall spacers vertically overlaps with a portion of the first set of sidewall spacers. The second mandrel is etched away. A first hardmask layer is etched, using the vertically overlapping first set of sidewall spacers and second set of sidewall spacers as a mask.


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