The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10998192 B1

PDF
Full Text
Expired
Date of Patent:
May. 04, 2021

Filed:

Sep. 13, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ekmini Anuja De Silva, Slingerlands, NY (US);

Jing Guo, Niskayuna, NY (US);

Luciana Meli, Albany, NY (US);

Nelson Felix, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01);
Abstract

A method includes depositing a resist layer onto a hard mask layer to form a multi-layer patterning material film stack on a semiconductor substrate, directing patterning radiation onto the film stack to form a developed pattern in the resist layer and exposing the film stack to at least one gas precursor in connection with a sequential infiltration synthesis process. The film stack is configured to facilitate selective infiltration of the at least one gas precursor into the resist layer.


Find Patent Forward Citations

De Silva, Ekmini. (2021). Sequential infiltration synthesis extreme ultraviolet single expose patterning (U.S. Patent No. 10998192). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10998192

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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