The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Feb. 21, 2019
Hamamatsu Photonics K.k., Hamamatsu, JP;
Hiroshi Kobayashi, Hamamatsu, JP;
Takeshi Endo, Hamamatsu, JP;
Hiroki Moriya, Hamamatsu, JP;
Toshinari Mochizuki, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in a multi-mode ion detector. The ion detector includes a dynode unit, a first electron detection portion including a semiconductor detector having an electron multiplication function, a second electron detection portion including an electrode, and a gate part. The first and second electron detection portions are capable of ion detection at different multiplication factors. The gate part includes at least a final-stage dynode as a gate electrode, and controls switching between passage and interruption of secondary electrons which are directed toward the first electron detection portion by adjusting a set potential of the gate electrode.