The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

May. 15, 2020
Applicant:

Realtek Semiconductor Corporation, Hsinchu, TW;

Inventors:

Fu-Chin Tsai, Hsinchu, TW;

Chun-Chi Yu, Hsinchu, TW;

Chih-Wei Chang, Hsinchu, TW;

Gerchih Chou, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/32 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/32 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01);
Abstract

The present disclosure discloses a memory access interface device. A clock generation circuit generates a command reference clock signal. Each of the access signal transmission circuits adjusts a phase and a duty cycle of one of access signals from a memory access controller according to the command reference clock signal to generate one of output access signal including an output external read enable signal to activate a memory device and an output internal read enable signal. The data reading circuit samples a data signal from the activated memory device according to a sampling signal to generate and transmit a read data signal to the memory access controller. The multiplexer generates the sampling signal according to the output internal read enable signal under a SDR mode and generates the sampling signal according to a data strobe signal from the activated memory device under a DDR mode.


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