The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Oct. 17, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Simon J. Lovett, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 11/221 (2013.01); G11C 11/2297 (2013.01);
Abstract
Methods, systems, and devices for power-efficient generation of voltage are described. A driver circuit in a memory device may produce a voltage on an output node for other components in the memory device to use. To produce the voltage, the driver circuit may use a first voltage supply to charge the output node to a first threshold voltage level. The driver may then use a second voltage source to charge the output node to a second threshold voltage level that is different than (e.g., higher than) the first threshold voltage level.