The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 2021

Filed:

Jan. 17, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Shubham Ranjan, Banswara, IN;

Parvinder Kumar Rana, Bengaluru, IN;

Janardhan Achanta, Bengaluru, IN;

Manish Chandra Joshi, Bengaluru, IN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 7/1063 (2013.01); G11C 7/1069 (2013.01);
Abstract

Provided are apparatus and methods for compensating fabrication process variation of on-chip component(s) in shared memory bank. The method includes tracking a flip voltage level and tracking a discharge leakage current to disconnect a keeper circuit from the local read bit-line. The method includes controlling a read current and the discharge leakage current based on determining at least one of fast transistor and slow transistor associated with the at least one the keeper circuit and a bit-cell.


Find Patent Forward Citations

Ranjan, Shubham. (2021). Apparatus and methods for compensating for variations in fabrication process of component(s) in a memory (U.S. Patent No. 10998018). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10998018

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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