The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Mar. 26, 2019
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventor:

Jaw-Ming Ding, Kaohsiung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/22 (2006.01); H03F 3/21 (2006.01); H03F 1/30 (2006.01); H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H03F 1/22 (2013.01); H03F 1/223 (2013.01); H03F 1/301 (2013.01); H03F 1/302 (2013.01); H03F 3/193 (2013.01); H03F 3/21 (2013.01);
Abstract

A power amplifier circuit includes a first transistor, a second transistor and a bias circuit. The first transistor has a base configured to receive a first signal. The second transistor has an emitter connecting to a collector of the first transistor and a collector configured to output a second signal. The bias circuit is coupled to the first transistor and the second transistor. The bias circuit is configured to provide a direct current (DC) voltage at the collector of the second transistor about twice a DC voltage at the collector of the first transistor. The bias circuit is configured to provide an alternating current (AC) or radio frequency (RF) voltage at the collector of the second transistor about twice an AC or RF voltage at the collector of the first transistor.


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