The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Sep. 19, 2018
Infineon Technologies Austria Ag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Mario Barusic, Seebogen, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A power diode includes a semiconductor body coupled to an anode metallization and to a cathode metallization. The semiconductor body has a drift region of a first conductivity type and an anode region of a second conductivity type. The anode region includes: a contact zone arranged in contact with the anode metallization; a field stop zone arranged below the contact zone; and a body zone arranged below the field stop zone and above the drift region. An electrically activated dopant concentration of the anode region has a profile, along a vertical direction, according to which: a first maximum is present within the contact zone; a second maximum is present within the field stop zone; and the dopant concentration continuously decreases from the first maximum to a local minimum, and continuously increases from the local minimum to the second maximum.