The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

May. 09, 2019
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventor:

Chin-Chin Tsai, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42344 (2013.01); H01L 21/02238 (2013.01); H01L 21/76224 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract

A structure of memory device is provided. The structure of memory device includes a first gate structure, disposed on a substrate, wherein the first gate structure is for storing charges. In addition, a second gate structure is disposed on the substrate. An insulating layer is in contact between the first gate structure and the second gate structure. An isolation structure integrated with the insulating layer is between the first gate structure and the second gate structure and at a top portion of the first gate structure and the second gate structure. The isolation structure provides an isolation distance between the first gate structure and the second gate structure.


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