The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Jul. 30, 2019
Sandisk Technologies Llc, Addison, TX (US);
Jayavel Pachamuthu, San Jose, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Marika Gunji-Yoneoka, Sunnyvale, CA (US);
Tadashi Nakamura, Yokkaichi, JP;
Tomohiro Oginoe, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. A memory opening is formed through the alternating stack. A memory film is formed in the memory opening. The memory film includes an opening at a bottom portion. A connection strap is formed by performing a selective semiconductor deposition process that grows a strap semiconductor material from a physically exposed surface of an underlying semiconductor material portion through the opening. A vertical semiconductor channel is formed on an inner sidewall of the memory film by non-selectively depositing a semiconductor channel material. The connection strap provides an electrical connection between the underlying semiconductor material portion and the vertical semiconductor channel through the opening in the memory film. The sacrificial material layers are then replaced with electrically conductive layers.