The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Dec. 27, 2018
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Xinshu Cai, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Khee Yong Lim, Singapore, SG;

Kiok Boone Elgin Quek, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11521 (2017.01); H01L 27/1156 (2017.01); H01L 29/423 (2006.01); H01L 27/11546 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 27/1156 (2013.01); H01L 27/11546 (2013.01); H01L 29/40114 (2019.08); H01L 29/4234 (2013.01);
Abstract

A memory device may include a substrate, a first gate structure, a mask and a second gate structure. The substrate may include a source region and a drain region at least partially arranged within the substrate, and a channel region arranged between the source region and the drain region. The first gate structure may be at least partially arranged over the channel region, and may include a top surface that may be substantially flat. The mask may be at least partially arranged over the top surface of the first gate structure. The second gate structure may be at least partially arranged over the mask and at least partially arranged adjacent to the first gate structure.


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