The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Sep. 09, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Fatma Arzum Simsek-Ege, Boise, ID (US);
Eric Blomiley, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10891 (2013.01); C23C 16/045 (2013.01); C23C 16/06 (2013.01); C23C 16/18 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/76846 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01); H01L 29/495 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01);
Abstract
Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.