The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Aug. 10, 2018
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Jiancheng Zhang, Shanghai, CN;

Wei Wu, Shanghai, CN;

Chenbo Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/72 (2012.01); G03F 1/80 (2012.01); G03F 1/84 (2012.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G03F 1/72 (2013.01); G03F 1/80 (2013.01); G03F 1/84 (2013.01);
Abstract

The present disclosure teaches a photolithography plate and a mask correction method, and relates to the field of semiconductor technologies. In forms of the mask correction method, a patterned mask is formed on a substrate, a location of a scattering bar embedded in the substrate is determined according to the mask, and an opening is formed at the determined location so as to embed the scattering bar in the opening. A scattering bar is embedded in a substrate of a photolithography plate so as to effectively avoid the impact of the scattering bar on a mask pattern, reduce a deposition loss, improve the correction effect, and shorten a correction time.


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