The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Oct. 03, 2019
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Manish Khandelwal, Danbury, CT (US);

David Kuiper, Brookfield, CT (US);

Thomas H. Baum, New Fairfield, CT (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 7/00 (2006.01); C07F 7/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C07F 7/025 (2013.01); H01L 21/02219 (2013.01); H01L 21/0228 (2013.01);
Abstract

Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.


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