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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10985251 B1

PDFFull Text
Date of Patent:
Apr. 20, 2021

Filed:

May. 11, 2020

Apparatuses including memory cells with gaps comprising low dielectric constant materials

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Minsoo Lee, Boise, ID (US);

Akira Goda, Setagaya, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Schwegman Lundberg & Woessner, P.A.

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 29/788 (2006.01); H01L 29/423 (2006.01); H01L 27/11519 (2017.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 29/40114 (2019.08); H01L 21/764 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7889 (2013.01);
Abstract

Various embodiments include apparatuses and methods of forming the same. One such apparatus can include a first dielectric material and a second dielectric material, and a conductive material between the first dielectric material and the second dielectric material. A charge storage element, such as a floating gate or charge trap, is between the first dielectric material and the second dielectric material and adjacent to the conductive material. The charge storage element has a first surface and a second surface. The first and second surfaces are substantially separated from the first dielectric material and the second dielectric material, respectively, by a first air gap and a second air gap. Additional apparatuses and methods are disclosed.

Find Patent Forward Citations

Lee, Minsoo. (2021). Apparatuses including memory cells with gaps comprising low dielectric constant materials (U.S. Patent No. 10985251). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10985251

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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