The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Dec. 19, 2019
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chung-Lin Huang, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10817 (2013.01); H01L 21/84 (2013.01); H01L 27/10852 (2013.01); H01L 28/92 (2013.01);
Abstract
The present disclosure provides a semiconductor capacitor structure. The semiconductor capacitor structure includes a substrate, a comb-like bottom electrode disposed over the substrate, a top electrode disposed over the comb-like bottom electrode, and a dielectric layer sandwiched between the top electrode and the comb-like bottom electrode. The comb-like bottom electrode includes a plurality of tooth portions parallel to the substrate and a supporting portion coupled to the plurality of tooth portions and perpendicular to the substrate.