The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Jun. 04, 2019
Versum Materials Us, Llc, Tempe, AZ (US);
Jianheng Li, Tempe, AZ (US);
Robert G. Ridgeway, Tempe, AZ (US);
Xinjian Lei, Tempe, AZ (US);
Raymond N. Vrtis, Tempe, AZ (US);
Bing Han, Tempe, AZ (US);
Madhukar B. Rao, Tempe, AZ (US);
Versum Materials US, LLC, Tempe, AZ (US);
Abstract
Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot HPO, showing good etch selectivity.