The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Nov. 28, 2019
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventor:
Jin Yong Oh, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/12 (2006.01); H01L 27/11551 (2017.01); H01L 27/11578 (2017.01); H01L 27/11524 (2017.01); G11C 16/04 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 8/12 (2013.01); G11C 16/28 (2013.01); H01L 27/11524 (2013.01); H01L 27/11551 (2013.01); H01L 27/11578 (2013.01);
Abstract
A non-volatile memory device includes a plurality of memory blocks grouped into pages, page buffer regions corresponding to the pages of the plurality of memory blocks; and a peripheral circuit region for supporting operations of the pages of the plurality of memory blocks. The peripheral circuit region comprises a plurality of pool capacitors. At least one of the memory blocks is a dummy block. The dummy block is configured to form a supplementary pool capacitor for suppressing power noise.