The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Jun. 13, 2017
Applicant:

Siltronic Ag, Munich, DE;

Inventor:

Joerg Haberecht, Freiberg, DE;

Assignee:

Siltronic AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); C23C 16/4558 (2013.01); C23C 16/45574 (2013.01); H01L 21/0262 (2013.01);
Abstract

Coated semiconductor wafers are produced by introducing a process gas through first gas inlet openings along a first flow direction into a reactor chamber and over a substrate wafer of semiconductor material lying on a susceptor in order to deposit a layer on the substrate wafer, whereby material derived from the process gas precipitates on a preheat ring arranged around the susceptor; extracting the coated substrate wafer from the reactor chamber; and subsequently removing material precipitate from the preheat ring by introducing an etching gas through the first gas inlet openings into the reactor chamber along the first flow direction over the preheat ring and also through second gas inlet openings between which the first gas inlet openings are arranged, along further flow directions which intersect with the first flow direction.


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