The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Feb. 20, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/28088 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/66651 (2013.01); H01L 29/7834 (2013.01); H01L 29/7848 (2013.01); H01L 29/1054 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6659 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate, forming a gate structure on the substrate, forming a hard mask on the substrate and the gate structure, patterning the hard mask to form trenches exposing part of the substrate, and forming raised epitaxial layers in the trenches. Preferably, the gate structure is extended along a first direction on the substrate and the raised epitaxial layers are elongated along a second direction adjacent to two sides of the gate structure.