The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Oct. 15, 2019
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01);
Abstract
A semiconductor device includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.
Quick Actions:
Cheng, Huai-Yu. (2021). Semiconductor device and memory cell (U.S. Patent No. 10978511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10978511
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile