The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Apr. 14, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Werner Juengling, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/1159 (2017.01); H01L 27/108 (2006.01); H01L 27/11507 (2017.01); H01L 27/11592 (2017.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 21/8239 (2006.01); H01L 21/8242 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); G11C 11/223 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 27/10814 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 27/11507 (2013.01); H01L 27/11592 (2013.01); H01L 29/40111 (2019.08); H01L 29/78391 (2014.09); H01L 29/785 (2013.01);
Abstract

In some embodiments, a method used in forming an array of memory cells comprises uses no more than two photolithographic masking steps are used in forming both: (a) sense lines longitudinally extending in a column direction that are individually directly above and electrically coupled to the upper source/drain regions of multiple of the second pedestals in the column direction; and (b) spaced elevationally-extending vias laterally between immediately-adjacent of the sense lines directly above and electrically coupled to the upper source/drain regions of multiple of the first pedestals. Other embodiments are disclosed.


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