The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Oct. 17, 2019
Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, TW;
National Taiwan University, Taipei, TW;
Jenn-Gwo Hwu, Taipei, TW;
Wei-Cheng Tian, Taipei, TW;
Samuel C. Pan, Hsinchu, TW;
Chao-Hsiung Wang, Hsinchu, TW;
Chi-Wen Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
National Taiwan University, Taipei, TW;
Abstract
A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.