The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Dec. 09, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Zhi-Sheng Zheng, New Taipei, TW;
Chih-Lin Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a first dielectric layer, a first conductor, a second dielectric layer, a second conductor, and an etch stop layer. The first conductor is in the first dielectric layer. The second dielectric layer is over the first dielectric layer. The second conductor is in the second dielectric layer and electrically connected to the first conductor. The second conductor has a first portion over a top surface of the first conductor and a second portion extending downwards from the first portion and around the first conductor. The etch stop layer has a first portion between the second portion of the second conductor and the first dielectric layer and a second portion between the first dielectric layer and the second dielectric layer. A top surface of the first portion of the etch stop layer is lower than a top surface of the second portion of the etch stop layer.