The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Jun. 25, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Poren Tang, Beijing, CN;
Abstract
Semiconductor devices and fabrication methods are provided. An exemplary fabrication method includes forming a first type of fin sidewall spacers and a second type of fin sidewall spacers. The first type of fin sidewall spacers are formed on two sidewall surfaces of a third fin portion group along a width direction of the third fin portions and two sidewall surfaces of a fourth fin portion group along a width direction of the fourth fin portions. The second type of fin sidewall spacers are formed between adjacent third fin portions and sidewall surfaces of the third fin portions and between adjacent fourth fin portions and on sidewall surfaces of the fourth fin portions. Top surfaces of the first type of fin sidewall spacers are higher than top surfaces of the second type of fin sidewall spacers and top surfaces of the third fin portions and the fourth fin portions.