The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Nov. 28, 2018
Meidensha Corporation, Tokyo, JP;
Naoto Kameda, Moriya, JP;
Toshinori Miura, Chiba, JP;
MEIDENSHA CORPORATION, Tokyo, JP;
Abstract
Disclosed is an oxide film formation method that includes supplying an ozone gas having an ozone concentration of 20 to 100 vol %, an unsaturated hydrocarbon gas and a raw material gas to a workpiece () placed in a pressure-reduced treatment furnace (), whereby an oxide film is formed on a surface of the workpiece () by a chemical vapor deposition process. An example of the unsaturated hydrocarbon gas is an ethylene gas. An example of the raw material gas is a TEOS gas. The flow rate of the ozone gas is preferably set equal to or more than twice the total flow rate of the unsaturated hydrocarbon gas and the raw material gas. By this oxide film formation method, the oxide film is formed on the workpiece () at a high deposition rate even under low-temperature conditions of 200° C. or lower.