The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Jul. 15, 2020
Ferroelectric Memory Gmbh, Dresden, DE;
Stefan Müller, Dresden, DE;
FERROELECTRIC MEMORY GMBH, Dresden, DE;
Abstract
A memory cell is provided that may include: a field-effect transistor structure including a channel and a gate structure disposed adjacent to the channel, the gate structure including: one or more remanent-polarizable layers, a gate electrode, wherein the one or more remanent-polarizable layers are disposed between the gate electrode and the channel, and one or more charge storage structures disposed between at least one of the one or more remanent-polarizable layers and the channel and/or the one or more remanent-polarizable layers and the gate electrode, the one or more charge storage structures are configured to stabilize a polarization state associated with the one or more remanent-polarizable layers by trapping charge in the one or more charge storage structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile