The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jun. 20, 2019
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Joachim Weyers, Hoehenkirchen, DE;
Andreas Boehm, Neubiberg, DE;
Anton Mauder, Kolbermoor, DE;
Patrick Schindler, Munich, DE;
Stefan Tegen, Dresden, DE;
Armin Tilke, Dresden, DE;
Uwe Wahl, Munich, DE;
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Abstract
A method includes partly removing a supporting layer arranged between a first semiconductor layer and a second semiconductor layer using an etching process to form at least one undercut between the first semiconductor layer and the second semiconductor layer, at least partly filling the at least one undercut with a first material having a higher thermal conductivity than the supporting layer, and forming a sensor device in or on the second semiconductor layer. Semiconductor arrangements and devices produced by the method are also described.