The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jul. 25, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;
Abstract
Methods for forming a magneto-resistive memory device and a capacitor in an interconnect structure are disclosed herein. An exemplary method includes forming a first level interconnect metal layer and a second level interconnect metal layer of an interconnect structure. The method further includes simultaneously forming a first plurality of layers in a first region of the interconnect structure and a second plurality of layers in a second region of the interconnect structure, wherein the first plurality of layers and the second plurality of layers are disposed between the first level interconnect metal layer and the second level interconnect metal layer. The first plurality of layers is configured as a magneto-resistive memory device. The second plurality of layers is configured as the capacitor. The magneto-resistive memory device and the capacitor are each coupled to the first level interconnect metal layer and the second level interconnect metal layer.