The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Mar. 06, 2019
Toshiba Memory Corporation, Minato-ku, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
A semiconductor memory device includes: a first conductive layer and a first insulating layer extending in a first direction, these layers being arranged in a second direction intersecting the first direction; a first semiconductor layer opposed to the first conductive layer, and extending in a third direction intersecting the first and second directions; a second semiconductor layer opposed to the first conductive layer, extending in the third direction; a first contact electrode connected to the first semiconductor layer; and a second contact electrode connected to the second semiconductor layer. In a first cross section extending in the first and second directions, an entire outer peripheral surface of the first semiconductor layer is surrounded by the first conductive layer, and an outer peripheral surface of the second semiconductor layer is surrounded by the first conductive layer and the first insulating layer.