The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Mar. 11, 2019
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chien-Hui Huang, Kaohsiung, TW;

Tsung-Hsun Wu, Kaohsiung, TW;

Po-Lin Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 23/528 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G11C 11/412 (2013.01); H01L 23/528 (2013.01);
Abstract

An SRAM structure includes a substrate. A first active region, a second active region, a third active region and a fourth active region are disposed on the substrate. A first gate structure includes a first part, a second part and a third part disposed on the substrate. The first part and the third part are perpendicular to the first active region. The second part is parallel to the first active region. The first part covers the first active region, the second active region and the fourth active region. The third part covers the fourth active region. The second part is disposed on an insulating region between the second active region and the fourth active region, and the second part contacts the first part and the third part.


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